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F1001C Datasheet(PDF) 1 Page - Polyfet RF Devices

Part No. F1001C
Description  PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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Maker  POLYFET [Polyfet RF Devices]
Homepage  http://www.polyfet.com
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F1001C Datasheet(HTML) 1 Page - Polyfet RF Devices

   
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RF CHARACTERISTICS (
WATTS OUTPUT )
20
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
MRI, Laser Driver and others.
PATENTED GOLD METALIZED
20 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR,
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
Total
Device
Junction to
Case Thermal
Maximum
Junction
Storage
Temperature
DC Drain
Current
Drain to
Gate
Drain to
Source
Gate to
Source
50 Watts
3.13
C
o
200
-65
to 150
2 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
16
60
0.2
20:1
Idq =
Idq =
Idq =
0.2
0.2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 175 MHz
F = 175 MHz
F = 175 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
1
1
7
1
0.8
1
5.5
33
4
20
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.05
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.1
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 4
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
HIGH GAIN, LOW NOISE
"Polyfet"
process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
t
TM
C
o
C
o
C/W
o
F1001C
polyfet rf devices
Dissipation
Resistance
Temperature
Voltage
Voltage
Voltage
8/1/97
VDMOS TRANSISTOR


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