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TSM4410D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4410D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  TSM4410D 1-1 2006/04 rev. A TSM4410D Dual N-Channel Enhancement Mode MOSFET Vds = 25V Id = 10A Rds(on), Vgs @ 10V, Ids @ 10A = 21mΩ Rds(on), Vgs @ 4.5V, Ids @ 8A = 15mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Fully characterized avalanche voltage and current Ordering Information Part No. Packing Package TSM4410DCS RL Tape & Reel 2,500/per reel SOP-8 Block Diagram Absolute Maximum Rating (T A = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 10 Pulsed Drain Current IDM 50 A TA = 25 oC 2.5 Maximum Power Dissipation TA = 70 oC PD 1.6 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction-to-Foot Thermal Resistance RθjF 22 Junction to Ambient Thermal Resistance (PCB mounted) Rθja 50 oC/W Note: 1. Maximum DC current limited by the package 2. 1-in 2 2oz Cu PCB board Pin assignment: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 |
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Similar Description - TSM4410D |
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