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IRG4BC30FD-SPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC30FD-SPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRG4BC30FD-SPbF 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage e 600 ——V VGE = 0V, IC = 250µA ∆V (BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.69 — V/°C VGE = 0V, IC = 1mA — 1.59 1.8 IC = 17A VGE = 15V VCE(on) Collector-to-Emitter Voltage — 1.99 — V IC = 31A See Fig. 2, 5 —1.7 — IC = 17A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 250µA ∆V GE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance f 6.1 10 — S VCE = 100V, IC = 17A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IF = 12A See Fig. 13 —1.3 1.6 IF = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 51 77 IC = 17A Qge Gate-to-Emitter Charge (turn-on) — 7.9 12 nC VCC = 400V See Fig. 8 Qgc Gate-to-Collector Charge (turn-on) — 19 28 VGE = 15V td(on) Turn-On delay time — 42 — TJ = 25°C tr Rise time — 26 — ns IC = 17A, VCC = 480V td(off) Turn-Off delay time — 230 350 VGE = 15V, RG = 23Ω tf Fall time — 160 230 Energy losses inlcude "tail" and Eon Turn-On Switching Loss — 0.63 — diode reverse recovery. Eoff Turn-Off Switching Loss — 1.39 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 2.02 3.9 td(on) Turn-On delay time — 42 — TJ = 150°C See Fig. 9,10,11,18 tr Rise time — 27 — ns IC = 17A, VCC = 480V td(off) Turn-Off delay time — 310 — VGE = 15V, RG = 23Ω tf Fall time — 310 — Energy losses inlcude "tail" and Ets Total Switching Loss — 3.2 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1100 — VGE = 0V Coes Output Capacitance — 74 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 14 — f = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. —80 120 TJ = 125°C 14 Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig. —5.6 10 TJ = 125°C 15 Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. 220 600 TJ = 125°C 16 di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig. During tb —120 — TJ = 125°C 17 VR = 200V di/dt 200A/µs Conditions Conditions IF = 12A |
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