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LB1201AS Datasheet(PDF) 4 Page - Power Innovations Ltd |
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LB1201AS Datasheet(HTML) 4 Page - Power Innovations Ltd |
4 / 14 page TISP61060D, TISP61060P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 4 SEPTEMBER 1995 - REVISED SEPTEMBER 1997 PRODUCT INFORMATION DEVICE PARAMETERS general Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilised. Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms related to the device internal structure, rather than its application usage as a single device may have many applications each using a different terminology for circuit connection. alternative symbol cross-reference guide This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this guide. CROSS-REFERENCE FOR TISP61060 AND TCM1030/60 TISP61060 PARAMETER DATA SHEET SYMBOL ALTERNATIVE SYMBOL ALTERNATIVE PARAMETER RATINGS & CHARACTERISTICS TCM1060, TCM1030 Non-repetitive peak on-state pulse current ITSP - Non-repetitive peak surge current Non-repetitive peak on-state current ITSM - Non-repetitive peak surge current,10 ms Non-repetitive peak on-state current ITSM - Continuous 60-Hz sinewave, 2 s Forward voltage VF VCF Forward clamping voltage Forward current IF IFM Peak forward current On-state voltage VT VC Reverse clamping voltage On-state current IT ITM Peak reverse current Switching current IS Itrip Trip current Breakover voltage V(BO) Vtrip Trip voltage Gate reverse current (with A and K terminals connected) IGAS ID Stand-by current, TIP & RING at GND Off-state current ID ID Stand-by current, TIP & RING at VS Off-state voltage VD VS Supply voltage Gate-cathode breakover voltage VGK(BO) VOS Transient overshoot voltage Gate voltage, (VGG is gate supply voltage referenced to the A terminal) VG VS Supply voltage Off-state capacitance CO Coff Off-state capacitance TERMINALS TCM1060, TCM1030 Cathode 1 K1 Tip Tip Cathode 2 K2 Ring Ring Anode A GND Ground Gate G VS Supply voltage |
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