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TISP61060D Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. TISP61060D
Description  DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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TISP61060D Datasheet(HTML) 2 Page - Power Innovations Ltd

 
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TISP61060D, TISP61060P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
2
SEPTEMBER 1995 - REVISED SEPTEMBER 1997
PRODUCT
INFORMATION
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤ T
J ≤ 85°C. The surge may be repeated after the device returns to
its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, IG = 0, -40°C ≤ TJ ≤ 85°C
VDRM
-100
V
Repetitive peak gate-cathode voltage, VKA = 0, -40°C ≤ TJ ≤ 85°C
VGKRM
-85
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
ITSP
A
10/1000 µs
30
10/160 µs
45
2/10 µs
50
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM
Arms
60 Hz sine-wave, 25 ms
6
60 Hz sine-wave, 2 s
1
Continuous on-state current (see Note 2)
ITM
0.3
A
Continuous forward current (see Note 2)
IFM
0.3
A
Operating free-air temperature range
TA
-40 to +85
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 s
TL
260
°C
recommended operating conditions
MIN
TYP
MAX
UNIT
CG
Gate decoupling capacitor
100
nF
electrical characteristics, -40°C
≤ T
J ≤ 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ID
Off-state current
VD = -85 V, VGK = 0 V
TJ = 25°C
5
µA
TJ = 85°C
50
µA
V(BO)
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300
Ω, V
GG = -50 V
dv/dt = -250 V/ms, Source Resistance = 300
Ω, V
GG = -65 V
IT = 12.5 A, 10/1000 µs, Source Resistance = 80 Ω, VGG = -50 V
-53
-68
-55
V
IS
Switching current
dv/dt = -250 V/ms, Source Resistance = 300
Ω, V
GG = -50 V
-100
mA
VT
On-state voltage
IT = 1 A
IT = 10 A
IT = 16 A
IT = 30 A
3
4
5
7
V
VF
Forward voltage
IF = 1 A
IF = 10 A
IF = 16 A
IF = 30 A
2
4
5
5
V
IH
Holding current
IT = -1 A, di/dt = +1A/ms, VGG = -50 V
-150
mA


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