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SRAF820 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # SRAF820
Description  Isolated 8.0 AMPS. Schottky Barrier Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

SRAF820 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  SRAF820 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd SRAF820 Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
- 100 -
Version: B07
SRAF820 - SRAF8150
Isolated 8.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Isolated Plastic package.
Low power loss, high efficiency.
High current capability, Low VF.
High reliability
High surge current capability.
Epitaxial construction.
Guard-ring for transient protection.
For use in low voltage, high frequency
inventor, free wheeling, and polarity
protection application
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free.
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
oC/10 seconds/.25”,(6.35mm) from
case.
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SRAF
820
SRAF
830
SRAF
840
SRAF
850
SRAF
860
SRAF
890
SRAF
8100
SRAF
8150
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
90
100
150
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
63
70
105
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
90
100
150
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
8.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage
@8.0A
VF
0.55
0.70
0.85
0.95
V
0.5
0.1
Maximum D.C. Reverse Current @ Tc=25
oC
at Rated DC Blocking Voltage @ Tc=100
oC
IR
15
10
5.0
mA
mA
Typical Junction Capacitance (Note 2)
Cj
430
360
pF
Typical Thermal Resistance (Note 1)
RθJC
5.0
o
C/W
Operating Junction Temperature Range
TJ
-65 to +125
-65 to +150
o
C
Storage Temperature Range
TSTG
-65 to +150
o
C
Notes
:
1. Thermal Resistance from Junction to Case Per Leg with Heat sink (2”x3”x0.25”) Al-Plate.
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.


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