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FRAF1003G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # FRAF1003G
Description  Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

FRAF1003G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  FRAF1003G Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd FRAF1003G Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
Version: A06
FRAF1001G - FRAF1007G
Isolated 10 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AC
.071(1.8)
MAX
.161(4.1)
.146(3.7)
.118(3.00)
.124(3.16)
.185(4.7)
.173(4.4)
.272(6.9)
.248(6.3)
.063(1.6)
MAX
.100(2.55)
.543(13.8)
.512(13.2)
.100(2.55)
.110(2.8)
.098(2.5)
.606(15.5)
.583(14.8)
.112(2.85)
.100(2.55)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.043(1.1)
.020(0.5)
.035(0.9)
.055(1.4)
.030(0.76)
.020(0.50)
2
PIN 1
PIN 2
Case Positive
CASE
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260 oC /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol FRAF
1001G
FRAF
1002G
FRAF
1003G
FRAF
1004G
FRAF
1005G
FRAF
1006G
FRAF
1007G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
@TC = 55
oC
I(AV)
10
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
150
A
Maximum Instantaneous Forward Voltage @ 10A
VF
1.3
V
Maximum DC Reverse Current @ TC=25
oC
at Rated DC Blocking Voltage @ TC=125
oC
IR
5.0
100
uA
uA
Maximum Reverse Recovery Time ( Note 2 )
Trr
150
250
500
nS
Typical Junction Capacitance ( Note 1 ) TJ=25
oC
Cj
60
pF
Typical Thermal Resistance (Note 3)
RθJC
5.0
oC/W
Operating and Storage Temperature Range
TJ ,TSTG
-65 to +150
oC
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.


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