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F1T6 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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F1T6 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page Dimensions in inches and (millimeters) Version: A06 F1T1 - F1T7 1.0 AMP. Fast Recovery Rectifiers TS-1 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss. Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Pure tin plated, Lead free., solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260 oC /10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension Weight: 0.20 gram Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol F1T1 F1T2 F1T3 F1T4 F1T5 F1T6 F1T7 Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length @TA = 55 oC I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 1.2 V Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 5.0 150 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 150 250 500 nS Typical Junction Capacitance ( Note 2 ) Cj 10 pF Typical Thermal Resistance RθJA 100 oC /W Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. |
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