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TN5320A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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TN5320A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 3 page  © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN5320A Rev. 1.0.0 2 Electrical Characteristics* T a=25×C unless otherwise noted * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle = 2% NOTES: 1) All voltages (V) and currents (A) are negative polarity for PNP transistors. Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 100mA, IB = 0 75 V ICEX Collector Cut-off Current VCE = 100 V, VBE = 1.5 V (rev.) 100 μA VCE = 70 V, VBE = 1.5 V (rev.) T = +150 °C 5 mA IEBO Emitter Cut-off Current VEB = 7.0 V 100 μA On Characteristics hFE DC Current Gain VCE = 4.0 V, IC = 0.5 mA, VCE = 2.0 V, IC = 1.0 mA, 30 10 130 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V VBE(on) Base-Emitter Voltage VCE = 4.0 V, IC = 500 mA 1.1 V |
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Similar Description - TN5320A |
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