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RGP10A Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part No. RGP10A
Description  1.0 AMP. Glass Passivated Junction Fast Recovery Rectifiers
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Maker  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

RGP10A Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  RGP10A Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd RGP10A Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (RGP10A THRU RGP10M)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
1
10
100
30
10
0
20
NUMBER OF CYCLES AT 60Hz
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
10
100
10
0
100
REVERSE VOLTAGE. (V)
Tj=25 C
0
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
1
10
0.1
FORWARD VOLTAGE. (V)
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
25
50
75
125
175
150
100
0
0.25
0.75
1.0
0.5
AMBIENT TEMPERATURE. ( C)
o
0.375" (9.5mm) LEAD LENGTH
RESISTIVE OR
INDUCTIVE LOAD
FIG.6- TYPICAL REVERSE CHARACTERISTICS
0
20
40
60
80
100
120
140
10
20
1
0.1
0.01
PERCENT OF RATED PEAK REVERSE
VOLTAGE. (%)
Tj=125 C
0
Tj=75 C
0
Tj=25 C
0


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