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STT500
Thyristor-Thyristor Modules
0
300
600
900
1200
1500
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.001
0.01
0.1
1
0
2000
4000
6000
8000
10000
12000
14000
0
200
400
600
800
0
200
400
600
800
1000
1200
0
25
50
75
100
125
150
1
1
0
105
106
107
0
25
50
75
100
125
150
I
2t
I
TAVM / IFAVM
I
dAVM
A
T
A
T
C
s
t
ms
t
A2s
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
900
1000
°C
80 % V
RRM
T
VJ = 45°C
50 Hz
T
VJ = 140°C
T
VJ = 140°C
T
VJ = 45°C
I
TAVM
W
P
tot
A
°C
R
thKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
°C
3xMTC500
Circuit
B6
T
A
R
thKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
V
R = 0V
I
TSM
A
A
0.01
0.02
0.03
0.045
0.06
0.08
0.12
P
tot
W
Fig.
Fig. 4
Power dissipation versus on-state current and ambient temperature
1 Surge overload current
I
TSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 3
Maximum forward current
at case temperature
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
10-3
10-2
10-1
100
101
102
0.1
1
10
I
G
V
G
A
1: I
GT, TVJ = 140°C
2: I
GT, TVJ =
25
°C
3: I
GT, TVJ = -40°C
V
4: P
GM =
20 W
5: P
GM =
60 W
6: P
GM = 120 W
I
GD, TVJ = 140°C
4
2
1
5
6
3
Fig. 5 Gate trigger characteristics
0.01
0.1
1
10
1
10
100
A
I
G
s
t
gd
Limit
typ.
T
VJ = 25° C
Fig. 7 Gate trigger delay time
3 x STT500