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STB9NK60ZD Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB9NK60ZD
Description  N-channel 600V - 0.85廓 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB9NK60ZD Datasheet(HTML) 3 Page - STMicroelectronics

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STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK/TO-220
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuos) at TC = 25°C
7
7 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuos) at TC = 100°C
4.3
4.3 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
28
28 (1)
A
PTOT
Total dissipation at TC = 25°C
125
30
W
Derating factor
1
0.24
W/°C
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
4000
V
dv/dt (3)
3.
ISD < 7A, di/dt < 500A/µs, VDD =80%V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
TO-220/D²PAK
TO-220FP
Rthj-pcb
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
30
--
°C/W
Rthj-case Thermal resistance junction-case Max
1
4.16
°C/W
Rthj-amb Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
7A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
235
mJ


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