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SKM50GB123D Datasheet(PDF) 1 Page - Semikron International

Part No. SKM50GB123D
Description  SEMITRANS® M IGBT Modules
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Maker  SEMIKRON [Semikron International]
Homepage  http://www.semikron.com
Logo SEMIKRON - Semikron International

SKM50GB123D Datasheet(HTML) 1 Page - Semikron International

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SEMITRANS® M
IGBT Modules
SKM 50 GB 123 D
SKM 50 GAL 123 D
GB
GAL
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL
diodes
8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (10 mm) and
creepage distances (20 mm).
Typical Applications:
→ B 6 - 85
• Three phase inverter drives
• Switching (not for linear use)
1)
Tcase = 25
°C, unless otherwise
specified
2)
IF = – IC, VR = 600 V,
– diF/dt = 800 A/
µs, VGE = 0 V
3)
Use VGEoff = -5 ... -15 V
5)
See fig. 2 + 3; RGoff = 27
8)
CAL = Controlled Axial Lifetime
Technology.
Case and mech. data
→ B 6 - 86
SEMITRANS 2
SEMITRANS 2
Absolute Maximum Ratings
Values
Symbol
Conditions
1)
... 123 D
Units
VCES
1200
V
VCGR
RGE = 20 k
1200
V
IC
Tcase = 25/80
°C
50 / 40
A
ICM
Tcase = 25/80
°C; tp = 1 ms
100 / 80
A
VGES
± 20
V
Ptot
per IGBT, Tcase = 25
°C
310
W
Tj, (Tstg)
– 40 . . .+150 (125)
°C
Visol
AC, 1 min.
2 500
V
humidity
DIN 40 040
Class F
climate
DIN IEC 68 T.1
40/125/56
Diodes
IF= – IC
Tcase = 25/80
°C
50 / 40
A
IFM= – ICM
Tcase = 25/80
°C; tp = 1 ms
100 / 80
A
IFSM
tp = 10 ms; sin.; Tj = 150 °C
550
I
2ttp = 10 ms; Tj = 150 °C
1500
A
2s
Characteristics
Symbol
Conditions
1)
min.
typ.
max.
Units
V(BR)CES
VGE = 0, IC = 1 mA
≥ VCES
––
V
VGE(th)
VGE = VCE, IC = 2 mA
4,5
5,5
6,5
V
ICES
VGE = 0
Tj = 25
°C–
0,3
1
mA
VCE = VCES
Tj = 125
°C
–3–
mA
IGES
VGE = 20 V, VCE = 0
200
nA
VCEsat
IC = 40 A
VGE = 15 V;
2,5(3,1)
3(3,7)
V
VCEsat
IC = 50 A
Tj = 25 (125)
°C
2,7(3,5)
V
gfs
VCE = 20 V, IC = 40 A
30
S
CCHC
per IGBT
350
pF
Cies
VGE = 0
3300
4000
pF
Coes
VCE = 25 V
500
600
pF
Cres
f = 1 MHz
220
300
pF
LCE
30
nH
td(on)
VCC = 600 V
70
ns
tr
VGE = + 15 V / - 15 V
3)
–60
ns
td(off)
IC = 40 A, ind. load
400
ns
tf
RGon = RGoff = 27
–45
ns
Eon
5)
Tj = 125
°C–
7
mWs
Eoff
5)
–4,5
mWs
Diodes
8)
VF = VEC
IF = 40 A
VGE = 0 V;
1,85(1,6)
2,2
V
VF = VEC
IF = 50 A
Tj = 25 (125)
°C
2,0(1,8)
V
VTO
Tj = 125 °C
1,2
V
rT
Tj = 125 °C
22
m
IRRM
IF = 40 A; Tj = 25 (125) °C
2)
23(35)
A
Qrr
IF = 40 A; Tj = 25 (125)
°C2)
–2,3(7)
µC
Thermal Characteristics
Rthjc
per IGBT
0,4
°C/W
Rthjc
per diode
0,7
°C/W
Rthch
per module
0,05
°C/W
© by SEMIKRON
0898
B 6 – 81


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