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TIP50 Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TIP50 Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS 2 DECEMBER 1971 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 TIP47 TIP48 TIP49 TIP50 250 300 350 400 V ICES Collector-emitter cut-off current VCE = 350 V VCE = 400 V VCE = 450 V VCE = 500 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 TIP47 TIP48 TIP49 TIP50 1 1 1 1 mA ICEO Collector cut-off current VCE = 150 V VCE = 200 V VCE = 250 V VCE = 300 V IB = 0 IB = 0 IB = 0 IB = 0 TIP47 TIP48 TIP49 TIP50 1 1 1 1 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 10 V VCE = 10 V IC = 0.3 A IC = 1 A (see Notes 5 and 6) 30 10 150 VCE(sat) Collector-emitter saturation voltage IB = 0.2 A IC = 1 A (see Notes 5 and 6) 1 V VBE Base-emitter voltage VCE = 10 V IC = 1 A (see Notes 5 and 6) 1.5 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 0.2 A f = 1 kHz 25 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 0.2 A f = 2 MHz 5 resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn on time IC = 1 A VBE(off) = -5 V IB(on) = 0.1 A RL = 200 Ω IB(off) = -0.1 A (see Figures 1 and 2) 0.2 µs toff Turn off time 2 µs |
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