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HERA1601G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # HERA1601G
Description  16.0 AMPS. Glass Passivated High Efficient Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

HERA1601G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  HERA1601G Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd HERA1601G Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
- 336 -
Version: B07
HERA1601G - HERA1608G
16.0 AMPS. Glass Passivated High Efficient Rectifiers
TO-220AC
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
PIN 1
PIN 2
CASE
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
oC/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol HERA
1601G
HERA
1602G
HERA
1603G
HERA
1604G
HERA
1605G
HERA
1606G
HERA
1607G
HERA
1608G
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800 1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800 1000
V
Maximum Average Forward Rectified Current
@TC =100
oC
I(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
250
A
Maximum Instantaneous Forward Voltage
@16.0A
VF
1.0
1.3
1.7
V
Maximum DC Reverse Current
@TA=25
oC at Rated DC Blocking Voltage
@ TA=125
oC
IR
10
400
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
80
nS
Typical Junction Capacitance
( Note 2 )
Cj
120
80
pF
Typical Thermal Resistance (Note 3)
RθJC
2.0
oC/W
Operating Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C.
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.


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