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HER806G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HER806G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  Dimensions in inches and (millimeters) Version: A06 HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. Mechanical Data Case: Molded plastic Epoxy: UL 94V0 rate flame retardant Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: Color band denotes cathode High temperature soldering guaranteed: 260 oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Mounting position: Any Weight: 1.65 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HER 801G HER 802G HER 803G HER 804G HER 805G HER 806G HER 807G HER 808G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TA = 55 oC I(AV) 8.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 150 A Maximum Instantaneous Forward Voltage @ 8.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 10 400 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 80 nS Typical Junction Capacitance ( Note 2 ) Cj 100 65 pF Operating Temperature Range TJ -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. |
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