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BA157G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BA157G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 2 page ![]() - 439 - FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 W NONINDUCTIVE 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10 W NONINDUCTIVE -1.0A -0.25A 0 +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm RATINGS AND CHARACTERISTIC CURVES (BA157G THRU BA159G) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORDWARD SURGE CURRENT 1 24 10 6 40 100 20 10 0 50 60 40 30 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method FIG.3- TYPICAL FORWARD CHARACTERISTICS 1.6 1.8 0.4 0.6 0.8 1.0 1.2 1.4 .03 0.1 0.3 1.0 10 20 3.0 .01 FORWARD VOLTAGE. (V) Tj=25 C Pulse Width=300 s 1% Duty Cycle o FIG.4- TYPICAL JUNCTION CAPACITANCE 1 2 4 6 10 100 60 40 20 20 10 40 60 100 REVERSE VOLTAGE. (V) Tj=25 C 0 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 25 0 50 75 100 125 150 175 1.0 0 0.5 1.5 2.0 AMBIENT TEMPERATURE. ( C) o Single Phase Half Wave 60Hz Resistive or Inductive Load .375"(9.5mm) Lead Length 70 |