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PM800HSA060 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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PM800HSA060 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 6 page  Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM10CSJ060 FLAT-BASE TYPE INSULATED PACKAGE 1 2 3 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 00 525 10 15 20 VD = 15V VCIN = 0V Tj = 25 oC Tj = 125 oC 0 0 0 1 2 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SUPPLY VOLTAGE, VD, (VOLTS) 12 14 16 18 20 IC = 10A VCIN = 0V Tj = 25 oC Tj = 125 oC 3 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 01 23 5 10 15 20 Tj = 25 oC VCIN = 0V VD = 17V 15 13 100 101 102 10-1 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton 100 101 toff VCC = 300V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC 100 101 102 10-1 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) tc(on) 100 101 tc(off) VCC = 300V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC 100 101 102 100 COLLECTOR REVERSE CURRENT, –IC, (AMPERES) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 102 VCC = 300V VD = 15V Inductive Load Tj = 25 oC Tj = 125 oC 00 1.0 2.5 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) DIODE FORWARD CHARACTERISTICS 101 102 0.5 1.5 2.0 Tj = 25 oC Tj = 125 oC VD = 15V 70 80 90 100 110 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) SUPPLY VOLTAGE, VD, (VOLTS) 12 14 16 18 20 Tj = 25 oC 80 0 0 90 120 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) JUNCTION TEMPERATURE, Tj, ( oC) 0 50 100 150 -50 VD = 15V 110 100 |
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