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1N4448W Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4448W Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page - 830 - 1N4448W Fast Switching Surface Mount Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance Mechanical Data Case: SOD-123, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code or Date Code only Type Code: T5 Weight: 0.01 gram (approx. ) SOD-123 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 500 mA Average Rectifier Output Current (Note 1) Io 250 mA Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S IFSM 4.0 2.0 A Power Dissipation (Note 1) Pd 350 mW Thermal Resistance Junction to Ambient Air (Note 1) R θJA 357 K/W Operating and Storage Temperature Range TJ, TSTG -65 to + 150 OC Electrical Characteristics Type Number Symbol Min Max Units Forward Voltage IF=5.0mA IF= 10mA IF =100mA IF=150mA VF 0.62 0.72 0.855 1.0 1.25 V Peak Reverse Current VR=75V VR=75V, Tj=150 ℃ VR=25V, TJ=150 ℃ VR=20V IR _ 2.5 50 30 25 uA nA Junction Capacitance VR=0, f=1.0MHz Cj _ 4.0 pF Reverse Recovery Time (Note 2) trr _ 4.0 nS Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100 Ω. 0.053(1.35) Max. 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.004(0.10) Max. 0.067(1.70) 0.55(1.40) 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) |
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