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TIC266 Datasheet(PDF) 1 Page - Power Innovations Ltd

Part No. TIC266
Description  SILICON TRIACS
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIC266 Datasheet(HTML) 1 Page - Power Innovations Ltd

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TIC266 SERIES
SILICON TRIACS
PRODUCT
INFORMATION
1
JULY 1991 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
High Current Triacs
q
25 A RMS
q
Glass Passivated Wafer
q
400 V to 800 V Off-State Voltage
q
175 A Peak Current
q
Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 50°C derate linearly to 110°C case temperature at
the rate of 625 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC266D
TIC266M
TIC266S
TIC266N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 50°C case temperature (see Note 2)
IT(RMS)
25
A
Peak on-state surge current full-sine-wave (see Note 3)
ITSM
175
A
Peak gate current
IGM
±1
A
Operating case temperature range
TC
-40 to +110
°C
Storage temperature range
Tstg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
TL
230
°C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDRM
Repetitive peak
off-state current
VD = Rated VDRM
IG = 0
TC = 110°C
±2
mA
IGTM
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
7
-15
-16
28
50
-50
-50
mA
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.7
-0.7
-0.8
0.8
2
-2
-2
2
V
VTM
Peak on-state voltage
ITM = ±35.2 A
IG = 50 mA
(see Note 4)
±1.5
±1.7
V
IH
Holding current
Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
6
-13
40
-40
mA
† All voltages are with respect to Main Terminal 1.
NOTE
4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.


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