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SI7900AEDN Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7900AEDN
Description  Dual N-Channel 20-V (D-S) MOSFET, Common Drain
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI7900AEDN Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New PowerPakr Package
- Low-Thermal Resistance, RthJC
- Low 1.07-mm Profile
D 3000-V ESD Protection
APPLICATIONS
D Protection Switch for 1-2 Li-ion Batteries
Si7900AEDN
Vishay Siliconix
New Product
Document Number: 72287
S-31418—Rev. A, 07-Jun-03
www.vishay.com
1
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.026 @ VGS = 4.5 V
8.5
20
0.030 @ VGS = 2.5 V
8
0.036 @ VGS = 1.8 V
7
D
G1
S1
D
G2
S2
N-Channel
N-Channel
2.6 kW
2.6 kW
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7900AEDN-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
"12
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
8.5
6
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
6.4
4.3
A
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
2.9
1.4
Maximum Power Dissipationa
TA = 25_C
PD
3.1
1.5
W
Maximum Power Dissipationa
TA = 85_C
PD
1.6
0.79
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
32
40
Maximum Junction-to-Ambienta
Steady State
RthJA
65
82
_C/W
Maximum Junction-to-Case
Steady State
RthJC
2.2
2.8
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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