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TIC108N Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TIC108N Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 8 page TIC108 SERIES SILICON CONTROLLED RECTIFIERS 2 APRIL 1971 - REVISED MARCH 1997 PRODUCT INFORMATION NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IDRM Repetitive peak off-state current VD = rated VDRM RGK = 1 kΩ TC = 110°C 400 µA IRRM Repetitive peak reverse current VR = rated VRRM IG = 0 TC = 110°C 1 mA IGT Gate trigger current VAA = 6 V RL = 100 Ω tp(g) ≥ 20 µs 0.2 1 mA VGT Gate trigger voltage VAA = 6 V tp(g) ≥ 20 µs RL = 100 Ω RGK = 1 kΩ TC = - 40°C 1.2 V VAA = 6 V tp(g) ≥ 20 µs RL = 100 Ω RGK = 1 kΩ 0.4 0.6 1 VAA = 6 V tp(g) ≥ 20 µs RL = 100 Ω RGK = 1 kΩ TC = 110°C 0.2 IH Holding current VAA = 6 V Initiating IT = 20 mA RGK = 1 kΩ TC = - 40°C 15 mA VAA = 6 V Initiating IT = 20 mA RGK = 1 kΩ 10 VTM Peak on-state voltage ITM = 5 A (see Note 6) 1.7 V dv/dt Critical rate of rise of off-state voltage VD = rated VD RGK = 1 kΩ TC = 110°C 80 V/µs thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 3.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tgt Gate-controlled turn-on time IT = 5 A IG = 10 mA See Figure 1 2.9 µs tq Circuit-commutated turn-off time IT = 5 A IRM = 8 A See Figure 2 13.3 µs |
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