TIC116M datasheet(1/6 Pages) POINN

Part #	TIC116M

Description	SILICON CONTROLLED RECTIFIERS

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Manufacturer	POINN [Power Innovations Ltd]

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TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

PRODUCT

INFORMATION

1

APRIL 1971 - REVISED JUNE 2000

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

G

8 A Continuous On-State Current

G

80 A Surge-Current

G

Glass Passivated Wafer

G

400 V to 800 V Off-State Voltage

G

Max IGT of 20 mA

K

A

G

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

1

2

3

absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

RATING

SYMBOL

VALUE

UNIT

Repetitive peak off-state voltage

TIC116D

TIC116M

TIC116S

TIC116N

VDRM

400

600

700

800

V

Repetitive peak reverse voltage

TIC116D

TIC116M

TIC116S

TIC116N

VRRM

400

600

700

800

V

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

IT(RMS)

8

A

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

IT(AV)

5

A

Surge on-state current at (or below) 25°C case temperature (see Note 3)

ITM

80

A

Peak positive gate current (pulse width

≤ 300 µs)

IGM

3

A

Peak gate power dissipation (pulse width

≤ 300 µs)

PGM

5

W

Average gate power dissipation (see Note 4)

PG(AV)

1

W

Operating case temperature range

TC

-40 to +110

°C

Storage temperature range

Tstg

-40 to +125

°C

Lead temperature 1.6 mm from case for 10 seconds

TL

230

°C

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