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TIC108M Datasheet(PDF) 3 Page - Power Innovations Ltd |
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TIC108M Datasheet(HTML) 3 Page - Power Innovations Ltd |
3 / 8 page 3 APRIL 1971 - REVISED MARCH 1997 TIC108 SERIES SILICON CONTROLLED RECTIFIERS PRODUCT INFORMATION PARAMETER MEASUREMENT INFORMATION Figure 1. Gate-controlled turn-on time Figure 2. Circuit-commutated turn-off time G R G V A 30 V I T V G I G DUT 6 Ω Ω V A V G 10% 90% t gt PMC1AA G1 R G V A 30 V I A 6 Ω Ω V G1 I G DUT G2 R G V G2 TH1 R2 R1 0.1 µµF to 0.5 µµF G2 t P Synchronisation I G V K (I RM Monitor) 0.1 Ω Ω NOTES: A. Resistor R1 is adjusted for the specified value of I RM. B. Resistor R2 value is 30/I H, where IH is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: t P = 50 µs to 300 µs duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G, of ≥ 20 V and duration of 10 µs to 20 µs. V G1 V G2 I A V A I T I RM t q V T 0 0 t P PMC1AB |
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