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TIC106 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. TIC106
Description  SILICON CONTROLLED RECTIFIERS
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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TIC106 Datasheet(HTML) 2 Page - Power Innovations Ltd

   
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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTE
6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
RGK = 1 kΩ
TC = 110°C
400
µA
IRRM
Repetitive peak
reverse current
VR = rated VRRM
IG = 0
TC = 110°C
1
mA
IGT
Gate trigger current
VAA = 6 V
RL = 100 Ω
tp(g) ≥ 20 µs
60
200
µA
VGT
Gate trigger voltage
VAA = 6 V
tp(g) ≥ 20 µs
RL = 100 Ω
RGK = 1 kΩ
TC = - 40°C
1.2
V
VAA = 6 V
tp(g) ≥ 20 µs
RL = 100 Ω
RGK = 1 kΩ
0.4
0.6
1
VAA = 6 V
tp(g) ≥ 20 µs
RL = 100 Ω
RGK = 1 kΩ
TC = 110°C
0.2
IH
Holding current
VAA = 6 V
Initiating IT = 10 mA
RGK = 1 kΩ
TC = - 40°C
8
mA
VAA = 6 V
Initiating IT = 10 mA
RGK = 1 kΩ
5
VTM
Peak on-state
voltage
ITM = 5 A
(See Note 6)
1.7
V
dv/dt
Critical rate of rise of
off-state voltage
VD = rated VD
RGK = 1 kΩ
TC = 110°C
10
V/µs
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
3.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tgt
Gate-controlled
turn-on time
IT = 5 A
IG = 10 mA
See Figure 1
1.75
µs
tq
Circuit-commutated
turn-off time
IT = 5 A
IRM = 8 A
IG = 10 mA
See Figure 2
7.7
µs


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