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MBR760 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # MBR760
Description  7.5 AMPS. Schottky Barrier Rectifiers
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR760 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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- 108 -
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1
2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
MBR735 THRU MBR7100
7.5 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
7.5 Amperes
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
TO-220A
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
MBR
7100
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
A
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105
oC
IFRM
15.0
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25
IF=7.5A,Tc=125
IF=15A,Tc=25
IF=15A,Tc=125
VF
0.57
0.84
0.72
0.75
0.65
0.92
0.82
V
Maximum Instantaneous Reverse Current @ Tc =25
at Rated DC Blocking Voltage (Note 1)
@ Tc=125
IR
0.1
15.0
0.5
50
0.1
mA
mA
Voltage Rate of Change (Rated VR)
Dv/dt
10,000
V/uS
Typical Junction Capactance
Cj
360
280
200
pF
Maximum Thermal Resistance, (Note 3)
R
θJC
R
θ
JA
5.0
15.0
℃/W
Operating Junction Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +175
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.


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