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BUPD1520 Datasheet(PDF) 3 Page - Power Innovations Ltd

Part No. BUPD1520
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BUPD1520 Datasheet(HTML) 3 Page - Power Innovations Ltd

   
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MAY 1999 - REVISED SEPTEMBER 1999
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
PRODUCT
INFORMATION
TYPICAL CHARACTERISTICS
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
Figure 2.
Figure 3.
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
I
C - Collector Current - A
0·01
0·1
1·0
10
1·0
10
100
R3636CHF
V
CE =
5 V
T
C = 125°C
T
C =
25°C
T
C =
0°C
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
1·0
10
100
1000
0·01
0·1
1·0
10
R3636CFB
t
p = 100 µs
t
p =
1 ms
t
p =
10 ms
DC Operation
T
C = 25°C
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
0
200
400
600
800 1000 1200 1400 1600
0
1
2
3
R3636CRB
I
B(on)
= I
C / 10
V
BE(off) = -5 V
T
C
= 25°C


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