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BUPD1520 Datasheet(PDF) 2 Page - Power Innovations Ltd |
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BUPD1520 Datasheet(HTML) 2 Page - Power Innovations Ltd |
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BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE 2 MAY 1999 - REVISED SEPTEMBER 1999 PRODUCT INFORMATION NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCEO Collector-emitter voltage IC = 1 mA 700 V VCBO Collector-base voltage IC = 100 µA 1500 V VEBO Emitter-base voltage IEB = 1 mA 11 V ICEO Collector cut-off current VCE = 700 V IB = 0 100 µA ICES Collector-emitter cut-off current VCE = 1500 V VBE = 0 100 µA IEBO Emitter cut-off current VEB = 11 V IC = 0 1 mA VBE(sat) Base-emitter saturation voltage IB = 100 mA IB = 100 mA IB = 400 mA IC = 500 mA IC = 1 A IC = 2 A (see Notes 2 and 3) 1.0 1.1 1.2 V VCE(sat) Collector-emitter saturation voltage IB = 50 mA IB = 100 mA IC = 250 mA IC = 500 mA (see Notes 2 and 3) 0.3 0.7 1.2 3.0 V hFE Forward current transfer ratio VCE = 5 V VCE = 5 V VCE = 5 V VCE = 5 V IC = 10 mA IC = 100 mA IC = 250 mA IC = 500 mA (see Notes 2 and 3) 10 10 10 7 21 25 25 18 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJA Junction to free air thermal resistance 62.5 °C/W RθJC Junction to case thermal resistance 2 °C/W resistive switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT td Delay time IC = 500 mA VCC = 125 V IB(on) = 50 mA IB(off) = 250 mA tp = 300 µs Duty cycle = 2% 0.1 µs tr Rise time 0.6 µs ts Storage time 1.0 µs tf Fall time 0.2 µs |
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