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BUPD1520 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. BUPD1520
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BUPD1520 Datasheet(HTML) 2 Page - Power Innovations Ltd

   
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BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2
MAY 1999 - REVISED SEPTEMBER 1999
PRODUCT
INFORMATION
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO
Collector-emitter
voltage
IC =
1 mA
700
V
VCBO
Collector-base
voltage
IC = 100 µA
1500
V
VEBO
Emitter-base
voltage
IEB =
1 mA
11
V
ICEO
Collector cut-off
current
VCE = 700 V
IB = 0
100
µA
ICES
Collector-emitter
cut-off current
VCE = 1500 V
VBE = 0
100
µA
IEBO
Emitter cut-off
current
VEB = 11 V
IC = 0
1
mA
VBE(sat)
Base-emitter
saturation voltage
IB = 100 mA
IB = 100 mA
IB = 400 mA
IC = 500 mA
IC = 1 A
IC = 2 A
(see Notes 2 and 3)
1.0
1.1
1.2
V
VCE(sat)
Collector-emitter
saturation voltage
IB =
50 mA
IB = 100 mA
IC = 250 mA
IC = 500 mA
(see Notes 2 and 3)
0.3
0.7
1.2
3.0
V
hFE
Forward current
transfer ratio
VCE = 5 V
VCE = 5 V
VCE = 5 V
VCE = 5 V
IC =
10 mA
IC = 100 mA
IC = 250 mA
IC = 500 mA
(see Notes 2 and 3)
10
10
10
7
21
25
25
18
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJA
Junction to free air thermal resistance
62.5
°C/W
RθJC
Junction to case thermal resistance
2
°C/W
resistive switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
td
Delay time
IC = 500 mA
VCC = 125 V
IB(on) = 50 mA
IB(off) = 250 mA
tp = 300 µs
Duty cycle = 2%
0.1
µs
tr
Rise time
0.6
µs
ts
Storage time
1.0
µs
tf
Fall time
0.2
µs


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