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BUPD1520 Datasheet(PDF) 1 Page - Power Innovations Ltd

Part No. BUPD1520
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BUPD1520 Datasheet(HTML) 1 Page - Power Innovations Ltd

   
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BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
PRODUCT
INFORMATION
1
MAY 1999 - REVISED SEPTEMBER 1999
Copyright © 1999, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
G
Designed for Self Oscillating Inverter
Applications
G
Rugged 1500 V Planar Construction
G
Integral Free-Wheeling Anti-Parallel Diode
device symbol
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
B
C
E
NOTE
1: This value applies for tp = 10 ms, duty cycle ≤ 2%.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (IB = 0)
VCEO
700
V
Collector-emitter voltage (VBE = 0)
VCES
1500
V
Emitter-base voltage (IC = 0)
VEBO
11
V
Continuous collector current
IC
2
A
Peak collector current (see Note 1)
ICM
2.5
A
Continuous base current
IB
2
A
Peak base current (see Note 1)
IBM
2.5
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
50
W
Operating junction temperature range
Tj
-55 to +125
°C
Storage temperature range
Tstg
-55 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
300
°C


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