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BULD85KC Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. BULD85KC
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BULD85KC Datasheet(HTML) 2 Page - Power Innovations Ltd

   
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BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2
MAY 1994 - REVISED SEPTEMBER 1997
PRODUCT
INFORMATION
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
NOTE
4: Tested in a typical High Frequency Electronic Ballast.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC =
0.1 A
L = 25 mH
400
V
ICES
Collector-emitter
cut-off current
VCE = 600 V
VBE = 0
10
µA
IEBO
Emitter cut-off
current
VEB =
9 V
IC = 0
1
mA
VBE(sat)
Base-emitter
saturation voltage
IB =
0.2 A
IC =
1 A
(see Notes 2 and 3)
0.85
1.1
V
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.2 A
IB =
0.4 A
IC =
1 A
IC =
2 A
(see Notes 2 and 3)
0.2
0.4
0.5
1
V
hFE
Forward current
transfer ratio
VCE = 10 V
VCE =
1 V
VCE =
5 V
IC = 0.01 A
IC =
1 A
IC =
2 A
(see Notes 2 and 3)
10
10
10
17.5
15
15.5
20
20
VEC
Anti-parallel diode
forward voltage
IE =
1 A
(see Notes 2 and 3)
1.2
1.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJA
Junction to free air thermal resistance
62.5
°C/W
RθJC
Junction to case thermal resistance
1.78
°C/W
switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
trr
Anti-parallel diode
reverse recovery time
Measured by holding transistor
in an off condition, VEB = -3 V.
(see Note 4)
1
µs
inductive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tsv
Storage time
IC = 1 A
L = 1 mH
IB(on) = 0.2 A
IB(off) = 0.2 A
VCC = 40 V
VCLAMP = 300 V
4
5
µs
resistive-load switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tfi
Current fall time
IC = 1 A
VCC = 300 V
IB(on) = 0.2 A
IB(off) = 0.2 A
150
200
ns


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