BULD85KC

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

2

MAY 1994 - REVISED SEPTEMBER 1997

PRODUCT

INFORMATION

3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located

within 3.2 mm from the device body.

NOTE

4: Tested in a typical High Frequency Electronic Ballast.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-emitter

sustaining voltage

0.1 A

L = 25 mH

400

V

Collector-emitter

cut-off current

10

µA

Emitter cut-off

current

9 V

1

mA

Base-emitter

saturation voltage

0.2 A

1 A

(see Notes 2 and 3)

0.85

1.1

V

Collector-emitter

saturation voltage

0.2 A

0.4 A

1 A

2 A

(see Notes 2 and 3)

0.2

0.4

0.5

1

V

Forward current

transfer ratio

1 V

5 V

1 A

2 A

(see Notes 2 and 3)

10

10

10

17.5

15

15.5

20

20

Anti-parallel diode

forward voltage

1 A

(see Notes 2 and 3)

1.2

1.5

V

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

Junction to free air thermal resistance

62.5

°C/W

Junction to case thermal resistance

1.78

°C/W

switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Anti-parallel diode

reverse recovery time

Measured by holding transistor

(see Note 4)

1

µs

inductive-load switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Storage time

L = 1 mH

4

5

µs

resistive-load switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current fall time

150

200

ns