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BULD50KC Datasheet(PDF) 4 Page - Power Innovations Ltd

Part No. BULD50KC
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BULD50KC Datasheet(HTML) 4 Page - Power Innovations Ltd

 
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BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
4
FEBRUARY 1994 - REVISED SEPTEMBER 1997
PRODUCT
INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
Figure 5.
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
1·0
10
100
1000
0·01
0·1
1·0
10
LDX50CFB
BULD50KC
T
C =
25°C
t
p = 100 µs
t
p =
1 ms
t
p =
10 ms
DC Operation
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
1·0
10
100
1000
0·01
0·1
1·0
10
LDX50SFB
BULD50SL
T
A =
25°C
t
p = 100 µs
t
p =
10 ms
t
p =
1 s
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE - Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
0
2
4
6
8
LDX50SRB
I
B(on)
= I
C / 5
V
BE(off) = -5 V
T
A
= 25°C


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