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BULD25D Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. BULD25D
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BULD25D Datasheet(HTML) 2 Page - Power Innovations Ltd

 
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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2
JULY 1994 - REVISED SEPTEMBER 1997
PRODUCT
INFORMATION
NOTES: 1. This value applies for tp = 1 s.
2. This value applies for tp = 10 ms, duty cycle ≤ 2%.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package.
NOTE
5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms.
Continuous collector current (see Note 1)
IC
2
A
Peak collector current (see Note 2)
ICM
4
A
Continuous base current (see Note 1)
IB
1.5
A
Peak base current (see Note 2)
IBM
2.5
A
Continuous device dissipation at (or below) 25°C ambient temperature
BULD25D
BULD25SL
Ptot
see Figure 10
see Figure 11
W
Maximum average continuous diode forward current at (or below) 25°C ambient temperature
IE(av)
0.5
A
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
electrical characteristics at 25°C ambient temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC =
0.1 A
400
V
ICES
Collector-emitter
cut-off current
VCE = 600 V
VBE = 0
10
µA
IEBO
Emitter cut-off
current
VEB =
9 V
IC = 0
1
mA
VBE(sat)
Base-emitter
saturation voltage
IB =
0.1 A
IC = 0.5 A
(see Notes 3 and 4)
0.9
1.1
V
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.1 A
IB =
0.2 A
IC = 0.5 A
IC =
1 A
(see Notes 3 and 4)
0.3
0.6
0.5
1
V
hFE
Forward current
transfer ratio
VCE = 10 V
VCE = 1.5 V
VCE =
5 V
IC = 0.01 A
IC = 0.5 A
IC =
1 A
(see Notes 3 and 4)
10
10
10
18
15
15
20
20
VEC
Anti-parallel diode
forward voltage
IE =
1 A
(see Notes 3 and 4)
1.5
1.7
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJA
Junction to free air thermal resistance
D package
SL Package
165
115
°C/W
switching characteristics at 25°C ambient temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
trr
Anti-parallel diode
reverse recovery time
Measured by holding transistor
in an off condition, VEB = -3 V
(see Note 5)
0.5
1
µs
ts
Storage time
(see Note 5)
2
3.5
5
µs
tf
Fall time
(see Note 5)
0.25
0.35
µs
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued)
RATING
SYMBOL
VALUE
UNIT


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