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BULD25D Datasheet(PDF) 1 Page - Power Innovations Ltd

Part No. BULD25D
Description  NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
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Maker  POINN [Power Innovations Ltd]
Homepage  http://www.bourns.com
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BULD25D Datasheet(HTML) 1 Page - Power Innovations Ltd

 
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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
PRODUCT
INFORMATION
1
JULY 1994 - REVISED SEPTEMBER 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed Specifically for High Frequency
Electronic Ballasts
q
Integrated Fast trr Anti-parallel Diode,
Enhancing Reliability
q
Diode trr Typically 500 ns
q
New Ultra Low-Height SOIC Power Package
q
Tightly Controlled Transistor Storage Times
q
Voltage Matched Integrated Transistor and
Diode
q
Characteristics Optimised for Cool Running
q
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
q
Custom Switching Selections Available
q
Surface Mount and Through-Hole Options
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching
transistors
has
tightly
controlled
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Single-in-line
SL
storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (VBE = 0)
VCES
600
V
Collector-base voltage (IE = 0)
VCBO
600
V
Collector-emitter voltage (IB = 0)
VCEO
400
V
Emitter-base voltage
VEBO
9
V
B
C
E
D PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
C
C
C
C
NC
B
E
NC
NC - No internal connection
1
2
3
B
C
E
SL PACKAGE
(TOP VIEW)
device symbol


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