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BULD125KC Datasheet(PDF) 4 Page - Power Innovations Ltd |
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BULD125KC Datasheet(HTML) 4 Page - Power Innovations Ltd |
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4 / 8 page 
BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE 4 MAY 1994 - REVISED SEPTEMBER 1997 PRODUCT INFORMATION MAXIMUM SAFE OPERATING REGIONS Figure 4. Figure 5. THERMAL INFORMATION Figure 6. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 1000 0·01 0·1 1·0 10 100 LD125CFB t p = 100 µs t p = 1 ms t p = 10 ms DC Operation BULD125KC T C = 25°C MAXIMUM REVERSE-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 0 100 200 300 400 500 600 700 800 0 2 4 6 8 10 12 14 LD125CRB I B(on) = I C / 5 V BE(off) = -5 V T C = 25°C THERMAL RESPONSE JUNCTION TO AMBIENT vs POWER PULSE DURATION t1 - Power Pulse Duration - s 10-4 10-3 10-2 10-1 100 101 102 103 0·001 0·01 0·1 1·0 LD125CZA 40% 60% 20% 10% 0% BULD125KC T A = 25°C T J max ( ) T A P D peak ( ) ZθJA RθJA RθJA max ( ) • • = – t1 t2 duty cycle = t1/t2 Read time at end of t1, |
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