MITSUBISHI RF POWER MOS FET

RD02MUS1B

RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W

RD02MUS1B

MITSUBISHI ELECTRIC

30 Jul 2007

8/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead

to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit

designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable

material or (iii) prevention against any malfunction or mishap.

Keep safety first in your circuit designs!

Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the

exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to

extreme short current flow between the drain and the source of the device. These results causes in fire or injury.

warning !