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RA30H4047M1 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. RA30H4047M1
Description  RF MOSFET MODULE 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RA30H4047M1 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI RF MOSFET MODULE
RA30H4047M1
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RA30H4047M1
MITSUBISHI ELECTRIC
15
th Mar 2007
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=30W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA30H4047M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H4047M1-101
Antistatic tray,
10 modules/tray
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
BLOCK DIAGRAM
PACKAGE CODE: H2M
4
1
5
2
3


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