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RA30H4047M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RA30H4047M1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H4047M1 RA30H4047M1 MITSUBISHI ELECTRIC 15 th Mar 2007 3/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) O U T P UT P O WE R, T O T AL E FFICIE NCY , 2nd, 3 rd H ARM O N IC S v e rsus FREQ UENCY v e rsus FR E Q UE NCY IN P U T VS WR v e rsus FR E Q UE NCY 10 20 30 40 50 60 70 390 400 410 420 4 30 44 0 450 460 470 480 FRE QUE NCY f(M Hz ) V DD =12.5V V GG=5 V P in=50m W P out η T -80 -70 -60 -50 -40 -30 390 400 410 420 43 0 440 450 460 470 48 0 FRE QUE NCY f(M Hz ) V DD=12.5V V GG=5 V P in=50m W 2nd 3rd 1 2 3 4 5 39 0 400 410 4 20 430 440 450 460 470 480 FRE QUE NCY f(M Hz ) V DD=12.5V V GG=5 V P in=50m W ρ in O U T PUT PO WER, PO WER G AIN and O UT PU T PO WER, PO WER G AIN and DRAIN CUR RENT v e rsus IN PU T PO WER DRAIN CU RRENT v e rsus IN PU T PO WER O U T PUT PO WER, PO WER G AIN and O UT PU T PO WER, PO WER G AIN and DRAIN CUR RENT v e rsus IN PU T PO WER DRAIN CU RRENT v e rsus IN PU T PO WER 0 10 20 30 40 50 60 -10 -5 0 5 101520 INPUT POW ER Pin(dBm) 0 4 8 12 16 20 24 f=430M Hz , V DD=12.5V , V GG=5V P out Gp IDD 0 10 20 30 40 50 60 -10-5 0 5 10 1520 INPUT POW ER Pin(dBm) 0 4 8 12 16 20 24 f=450M Hz , V DD=12.5V , V GG=5V P out Gp IDD 0 10 20 30 40 50 60 -10-5 0 5 101520 INPUT POW ER Pin(dBm) 0 4 8 12 16 20 24 f=470M Hz , V DD=12.5V , V GG=5V P out Gp IDD 0 10 20 30 40 50 60 -10-5 0 5 1015 20 INPUT POW ER Pin(dBm) 0 4 8 12 16 20 24 f=400M Hz , V DD=12.5V , V GG=5V P out Gp IDD |
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