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RA30H4047M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. RA30H4047M1
Description  RF MOSFET MODULE 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RA30H4047M1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4047M1
RA30H4047M1
MITSUBISHI ELECTRIC
15
th Mar 2007
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
O U T P UT P O WE R, T O T AL E FFICIE NCY ,
2nd, 3
rd H ARM O N IC S v e rsus FREQ UENCY
v e rsus FR E Q UE NCY
IN P U T VS WR v e rsus FR E Q UE NCY
10
20
30
40
50
60
70
390 400 410 420 4 30 44 0 450 460 470 480
FRE QUE NCY f(M Hz )
V
DD =12.5V
V
GG=5 V
P
in=50m W
P
out
η
T
-80
-70
-60
-50
-40
-30
390 400 410 420 43 0 440 450 460 470 48 0
FRE QUE NCY f(M Hz )
V
DD=12.5V
V
GG=5 V
P
in=50m W
2nd
3rd
1
2
3
4
5
39 0 400 410 4 20 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
V
DD=12.5V
V
GG=5 V
P
in=50m W
ρ
in
O U T PUT PO WER, PO WER G AIN and
O UT PU T PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus IN PU T PO WER
DRAIN CU RRENT v e rsus IN PU T PO WER
O U T PUT PO WER, PO WER G AIN and
O UT PU T PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus IN PU T PO WER
DRAIN CU RRENT v e rsus IN PU T PO WER
0
10
20
30
40
50
60
-10
-5
0
5
101520
INPUT POW ER Pin(dBm)
0
4
8
12
16
20
24
f=430M Hz ,
V
DD=12.5V ,
V
GG=5V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POW ER Pin(dBm)
0
4
8
12
16
20
24
f=450M Hz ,
V
DD=12.5V ,
V
GG=5V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10-5
0
5
101520
INPUT POW ER Pin(dBm)
0
4
8
12
16
20
24
f=470M Hz ,
V
DD=12.5V ,
V
GG=5V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10-5
0
5
1015
20
INPUT POW ER Pin(dBm)
0
4
8
12
16
20
24
f=400M Hz ,
V
DD=12.5V ,
V
GG=5V
P
out
Gp
IDD


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