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RA30H1317M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RA30H1317M1
Description  RF MOSFET MODULE 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA30H1317M1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H1317M1
RA30H1317M1
MITSUBISHI ELECTRIC
2 Aug 2007
3/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
2
nd, 3
rd HARMONICS versus FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
130
140
150
160
170
180
FREQUENCY f(MHz)
0
10
20
30
40
50
60
70
80
90
100
VDD=12.5V
VGG=5V
Pin=50mW
Pout
η
T
ρ
in
0
10
20
30
40
50
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
2
4
6
8
10
f=135MHz
VDD=12.5V
VGG=5V
Pout
IDD
Gp
0
10
20
30
40
50
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
2
4
6
8
10
f=155MHz
VDD=12.5V
VGG=5V
Pout
Gp
IDD
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
130
140
150
160
170
180
FREQUENCY f(MHz)
VDD=12.5V
VGG=5V
Pin=50mW
2
nd
3
rd
0
10
20
30
40
50
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm)
0
2
4
6
8
10
f=175MHz
VDD=12.5V
VGG=5V
Pout
Gp
IDD


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