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PS21962-A Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

Part No. PS21962-A
Description  600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21962-A Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962/-A/-C
TRANSFER-MOLD TYPE
INSULATED TYPE
Jun. 2005
Note 7: Flatness measurement position
+ –
+
Measurement position
Heat sink side
Heat sink side
4.6mm
DIP-IPM
Mounting screw : M3
(Note 6)
Condition
Parameter
Limits
Mounting torque
Weight
Heat-sink flatness
Min.
MECHANICAL CHARACTERISTICS AND RATINGS
Typ.
Max.
0.59
–50
Unit
10
0.78
100
N·m
g
µm
Recommended : 0.69 N·m
(Note 7)
V
V
V
V/
µs
µs
Supply voltage
Control supply voltage
Control supply voltage
Control supply variation
Arm shoot-through blocking time
Applied between P-N
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-U, VVFB-V, VWFB-W
For each input signal, TC
≤ 100°C
400
16.5
18.5
1
VCC
VD
VDB
∆VD, ∆VDB
tdead
Condition
Symbol
Parameter
Limits
Min.
Typ.
Max.
0
13.5
13.0
–1
1.5
Unit
RECOMMENDED OPERATION CONDITIONS
300
15.0
15.0
Note 8 : The allowable r.m.s. current value depends on the actual application conditions.
9: IPM might not make response if the input signal pulse width is less than the recommended minimum value.
Note 6 : Plain washers (ISO 7089~7094) are recommended.
IO
PWIN(on)
PWIN(off)
VNC
Output r.m.s. current
Allowable minimum input
pulse width
VNC voltage variation
VCC = 300V, VD = VDB = 15V,
P.F = 0.8, sinusoidal PWM,
Tj
≤ 125°C, TC ≤ 100°C
(Note 8)
(Note 9)
Between VNC-N (including surge)
Arms
µs
V
0.5
0.5
–5.0
5.0
fPWM = 5kHz
fPWM = 15kHz
2.5
1.5


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