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PS21962-A Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. PS21962-A
Description  600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21962-A Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962/-A/-C
TRANSFER-MOLD TYPE
INSULATED TYPE
Jun. 2005
2.20
2.30
2.20
1.60
0.50
2.00
0.80
1
10
4.7
5.4
mA
V
Tj = 25
°C
Tj = 125
°C
IC = 5A, Tj = 25
°C
IC = 5A, Tj = 125
°C
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Symbol
Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Rth(j-c)Q
Rth(j-c)F
Min.
THERMAL RESISTANCE
Typ.
Max.
Unit
Tj = 25
°C, –IC = 5A, VIN = 0V
Condition
Symbol
Parameter
Limits
Min.
Typ.
Max.
0.50
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWD forward voltage
Junction to case thermal
resistance
(Note 3)
VD = VDB = 15V
VIN = 5V
Switching times
VCC = 300V, VD = VDB = 15V
IC = 5A, Tj = 125
°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
VCE = VCES
1.70
1.80
1.70
1.00
0.30
0.30
1.40
0.50
V
µs
µs
µs
µs
µs
°C/W
°C/W
CONTROL (PROTECTION) PART
Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5: Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.
Symbol
ID
VFOH
VFOL
VSC(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Vth(hys)
Parameter
Condition
Limits
Unit
Circuit current
FO output voltage
Short circuit trip level
Control supply under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
ON/OFF threshold hysteresis
voltage
VD = VDB = 15V
VIN = 5V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
VSC = 0V, FO terminal pull-up to 5V by 10k
VSC = 1V, IFO = 1mA
Tj = 25
°C, VD = 15V
(Note 4)
VIN = 5V
Trip level
Reset level
Trip level
Reset level
(Note 5)
Applied between UP, VP, WP, UN, VN, WN-VNC
4.9
0.43
0.70
10.0
10.5
10.3
10.8
20
0.8
0.35
0.48
1.00
2.1
1.3
0.65
2.80
0.55
2.80
0.55
0.95
0.53
1.50
12.0
12.5
12.5
13.0
2.6
Min.
Typ.
Max.
mA
mA
mA
mA
V
V
V
mA
V
V
V
V
µs
V
V
V
VD = VDB = 15V
VIN = 0V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
Tj
≤ 125°C
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100
µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3
°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
Input current


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