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PS21962-4S Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. PS21962-4S
Description  600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21962-4S Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-4S
TRANSFER-MOLD TYPE
INSULATED TYPE
Mar. 2007
2
Note 2: TC measurement point
DIP-IPM
IGBT chip position
Power terminals
FWD chip position
Control terminals
TC point
Heat sink side
11.6mm
3mm
400
–20~+100
–40~+125
1500
VD = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
VCC(PROT)
TC
Tstg
Viso
V
V
V
V
mA
V
20
20
–0.5~VD+0.5
–0.5~VD+0.5
1
–0.5~VD+0.5
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-U, VVFB-V, VWFB-W
Applied between UP, VP, WP, UN, VN,
WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
VD
VDB
VIN
VFO
IFO
VSC
450
500
600
5
10
21.3
–20~+125
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
TC = 25°C
TC = 25°C, less than 1ms
TC = 25°C, per 1 chip
(Note 1)
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Condition
Symbol
Parameter
Ratings
Unit
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
V
V
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Condition
Symbol
Parameter
Ratings
Unit
CONTROL (PROTECTION) PART
Symbol
Ratings
Unit
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
V
°C
°C
Vrms
TOTAL SYSTEM
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ TC ≤ 100°C).
Parameter
Condition


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