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PS21962-4 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. PS21962-4
Description  600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21962-4 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Aug. 2007
5
2.20
2.30
2.20
1.60
0.50
2.00
0.80
1
10
4.7
5.4
mA
V
Tj = 25
°C
Tj = 125
°C
IC = 5A, Tj = 25
°C
IC = 5A, Tj = 125
°C
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Symbol
Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Rth(j-c)Q
Rth(j-c)F
Min.
THERMAL RESISTANCE
Typ.
Max.
Unit
Tj = 25
°C, –IC = 5A, VIN = 0V
Condition
Symbol
Parameter
Limits
Min.
Typ.
Max.
0.50
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWD forward voltage
Junction to case thermal
resistance
(Note 3)
VD = VDB = 15V
VIN = 5V
Switching times
VCC = 300V, VD = VDB = 15V
IC = 5A, Tj = 125
°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
VCE = VCES
1.70
1.80
1.70
1.00
0.30
0.30
1.40
0.50
V
µs
µs
µs
µs
µs
°C/W
°C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100
µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3
°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
Note 2: TC measurement point
DIP-IPM
IGBT chip position
Power terminals
FWD chip position
Control terminals
TC point
Heat sink side
11.6mm
3mm
400
–20~+100
–40~+125
1500
VD = 13.5~16.5V, Inverter part
Tj = 125
°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
Between pins and heat-sink plate
VCC(PROT)
TC
Tstg
Viso
Symbol
Ratings
Unit
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
V
°C
°C
Vrms
TOTAL SYSTEM
Parameter
Condition


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