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PS21962-4 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. PS21962-4
Description  600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21962-4 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
Aug. 2007
4
V
V
V
V
mA
V
20
20
–0.5~VD+0.5
–0.5~VD+0.5
1
–0.5~VD+0.5
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-U, VVFB-V, VWFB-W
Applied between UP, VP, WP, UN, VN,
WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
VD
VDB
VIN
VFO
IFO
VSC
450
500
600
5
10
21.3
–20~+125
Applied between P-N
Applied between P-N
TC = 25
°C
TC = 25
°C, less than 1ms
TC = 25
°C, per 1 chip
(Note 1)
VCC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
Condition
Symbol
Parameter
Ratings
Unit
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
V
V
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Condition
Symbol
Parameter
Ratings
Unit
CONTROL (PROTECTION) PART
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150
°C (@ TC ≤ 100°C). However, to
ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave)
≤ 125°C (@ TC ≤ 100°C).
Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0
µs.
2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.
Drive circuit
Drive circuit
Protection circuit
W
V
U
B
C
VNC
CIN
A
P
N1
N
C
R
Shunt Resistor
External protection circuit
DIP-IPM
L-side IGBTS
H-side IGBTS
SC Protection
Trip Level
IC (A)
tw (
µs)
2
0
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is
recommended to stop the system when the Fo signal is received and check the fault.
Collector current
waveform
(Note 1)
(Note 2)
Fig. 6 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT


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