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IRFU3709PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFU3709PBF
Description  HEXFET®Power MOSFET
Download  9 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFU3709PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFU3709PbF
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.88
1.3
V
TJ = 25°C, IS = 30A, VGS = 0V
ƒ
–––
0.82
–––
TJ = 125°C, IS = 30A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
48
72
ns
TJ = 25°C, IF = 30A, VR=15V
Qrr
Reverse Recovery Charge
–––
46
69
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
48
72
ns
TJ = 125°C, IF = 30A, VR=15V
Qrr
Reverse Recovery Charge
–––
52
78
nC
di/dt = 100A/µs
ƒ
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
382
mJ
IAR
Avalanche Current

–––
30
A
Avalanche Characteristics
S
D
G
Diode Characteristics
90
„
360
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
53
–––
–––
S
VDS = 15V, ID = 30A
Qg
Total Gate Charge
–––
27
41
ID = 15A
Qgs
Gate-to-Source Charge
–––
6.7
–––
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.7
–––
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
22
–––
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 15V
tr
Rise Time
–––
171
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
21
–––
RG = 1.8Ω
tf
Fall Time
–––
9.2
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
2672 –––
VGS = 0V
Coss
Output Capacitance
–––
1064 –––
pF
VDS = 16V
Crss
Reverse Transfer Capacitance
–––
109
–––
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.029
––– V/°C
Reference to 25°C, ID = 1mA
–––
6.9
9.0
VGS = 10V, ID = 15A
ƒ
–––
7.9
10.5
VGS = 4.5V, ID = 12A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m


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