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BD250 Datasheet(PDF) 2 Page - Power Innovations Ltd

Part No. BD250
Description  PNP SILICON POWER TRANSISTORS
Download  6 Pages
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BD250 Datasheet(HTML) 2 Page - Power Innovations Ltd

  BD250 Datasheet HTML 1Page - Power Innovations Ltd BD250 Datasheet HTML 2Page - Power Innovations Ltd BD250 Datasheet HTML 3Page - Power Innovations Ltd BD250 Datasheet HTML 4Page - Power Innovations Ltd BD250 Datasheet HTML 5Page - Power Innovations Ltd BD250 Datasheet HTML 6Page - Power Innovations Ltd  
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BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
(see Note 5)
IB = 0
BD250
BD250A
BD250B
BD250C
-45
-60
-80
-100
V
ICES
Collector-emitter
cut-off current
VCE = -55 V
VCE = -70 V
VCE = -90 V
VCE = -115 V
VBE = 0
VBE = 0
VBE = 0
VBE = 0
BD250
BD250A
BD250B
BD250C
-0.7
-0.7
-0.7
-0.7
mA
ICEO
Collector cut-off
current
VCE = -30 V
VCE = -60 V
IB = 0
IB = 0
BD250/250A
BD250B/250C
-1
-1
mA
IEBO
Emitter cut-off
current
VEB =
-5 V
IC = 0
-1
mA
hFE
Forward current
transfer ratio
VCE =
-4 V
VCE =
-4 V
VCE =
-4 V
IC = -1.5 A
IC = -15 A
IC = -25 A
(see Notes 5 and 6)
25
10
5
VCE(sat)
Collector-emitter
saturation voltage
IB =
-1.5 A
IB =
-5 A
IC = -15 A
IC = -25 A
(see Notes 5 and 6)
-1.8
-4
V
VBE
Base-emitter
voltage
VCE =
-4 V
VCE =
-4 V
IC = -15 A
IC = -25 A
(see Notes 5 and 6)
-2
-4
V
hfe
Small signal forward
current transfer ratio
VCE = -10 V
IC =
-1 A
f = 1 kHz
25
|h
fe|
Small signal forward
current transfer ratio
VCE = -10 V
IC =
-1 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1
°C/W
RθJA
Junction to free air thermal resistance
42
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -5 A
VBE(off) = 5 V
IB(on) = -0.5 A
RL = 5 Ω
IB(off) = 0.5 A
tp = 20 µs, dc ≤ 2%
0.2
µs
toff
Turn-off time
0.4
µs


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