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BD250 Datasheet(PDF) 1 Page - Power Innovations Ltd

Part No. BD250
Description  PNP SILICON POWER TRANSISTORS
Download  6 Pages
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

BD250 Datasheet(HTML) 1 Page - Power Innovations Ltd

  BD250 Datasheet HTML 1Page - Power Innovations Ltd BD250 Datasheet HTML 2Page - Power Innovations Ltd BD250 Datasheet HTML 3Page - Power Innovations Ltd BD250 Datasheet HTML 4Page - Power Innovations Ltd BD250 Datasheet HTML 5Page - Power Innovations Ltd BD250 Datasheet HTML 6Page - Power Innovations Ltd  
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BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
PRODUCT
INFORMATION
1
JUNE 1973 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
BD249 Series
q
125 W at 25°C Case Temperature
q
25 A Continuous Collector Current
q
40 A Peak Collector Current
q
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD250
BD250A
BD250B
BD250C
VCER
-55
-70
-90
-115
V
Collector-emitter voltage (IC = -30 mA)
BD250
BD250A
BD250B
BD250C
VCEO
-45
-60
-80
-100
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
IC
-25
A
Peak collector current (see Note 1)
ICM
-40
A
Continuous base current
IB
-5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3
W
Unclamped inductive load energy (see Note 4)
½LIC
2
90
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C


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