BD246A datasheet(2/6 Pages) POINN

Part #	BD246A

Description	PNP SILICON POWER TRANSISTORS

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Manufacturer	POINN [Power Innovations Ltd]

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BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS

2

JUNE 1973 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = -30 mA

(see Note 5)

IB = 0

BD246

BD246A

BD246B

BD246C

-45

-60

-80

-100

V

ICES

Collector-emitter

cut-off current

VCE = -55 V

VCE = -70 V

VCE = -90 V

VCE = -115 V

VBE = 0

BD246

BD246A

BD246B

BD246C

-0.4

mA

ICEO

Collector cut-off

current

VCE = -30 V

VCE = -60 V

IB = 0

BD246/246A

BD246B/246C

-0.7

mA

IEBO

Emitter cut-off

current

VEB =

-5 V

IC = 0

-1

mA

hFE

Forward current

transfer ratio

VCE =

-4 V

VCE =

-4 V

VCE =

-4 V

IC =

-1 A

IC =

-3 A

IC = -10 A

(see Notes 5 and 6)

40

20

4

VCE(sat)

Collector-emitter

saturation voltage

IB =

-0.3 A

IB =

-2.5 A

IC =

-3 A

IC = -10 A

(see Notes 5 and 6)

-1

-4

V

VBE

Base-emitter

voltage

VCE =

-4 V

VCE =

-4 V

IC =

-3 A

IC = -10 A

(see Notes 5 and 6)

-1.6

-3

V

hfe

Small signal forward

current transfer ratio

VCE = -10 V

IC = -0.5 A

f = 1 kHz

20

|h

fe|

Small signal forward

current transfer ratio

VCE = -10 V

IC = -0.5 A

f = 1 MHz

3

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.56

°C/W

RθJA

Junction to free air thermal resistance

42

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = -1 A

VBE(off) = 3.7 V

IB(on) = -0.1 A

RL = 20 Ω

IB(off) = 0.1 A

tp = 20 µs, dc ≤ 2%

0.2

µs

toff

Turn-off time

0.8

µs

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