Skyworks Solutions, Inc. [781] 376-3000

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1

Specifications subject to change without notice. 2/02A

36–39 GHz GaAs MMIC

Driver Amplifier

Features

■ Single Bias Supply Operation (5 V)

■ 7 dB Typical Small Signal Gain

■ 0.25 µm Ti/Pd/Au Gates

■ 100% On-Wafer RF and DC Testing

■ 100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA038P1-00

Description

Alpha’s single-stage, reactively-matched 36–39 GHz

GaAs MMIC driver amplifier has a typical small signal

The chip uses Alpha’s proven 0.25 mm MESFET

technology, and is based upon MBE layers and electron

beam lithography for the highest uniformity and

repeatability. The FETs employ surface passivation to

ensure a rugged, reliable part with through-substrate via

holes and gold-based backside metallization to facilitate

a conductive epoxy or eutectic die attach process. All

chips are screened for gain, output power and

S-parameters prior to shipment for guaranteed

performance. Designed for 36–39 GHz digital radio band.

Parameter

Condition

Symbol

Min.

Max.

Unit

Drain Current

50

60

mA

Small Signal Gain

F = 36–39 GHz

G

6

7

dB

Input Return Loss

F = 36–39 GHz

610

dB

Output Return Loss

F = 36–39 GHz

610

dB

Output Power at 1 dB Gain Compression

F = 38 GHz

12

14

dBm

Saturated Output Power

F = 38 GHz

14

16

dBm

280

°C/W

0.000

0.087

0.501

0.815

Dimensions indicated in mm.

All DC pads are 0.1 x 0.1 mm and RF pads are 0.07 mm wide.

Chip thickness = 0.1 mm.

Characteristic

Value

-55°C to +90°C

-65°C to +150°C

16 dBm

175°C

Absolute Maximum Ratings

1. Calculated value based on measurement of discrete FET.

2. Typical represents the median parameter value across the specified

frequency range for the median chip.