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MCH5811 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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MCH5811 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page MCH5811 No.8059-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V Forward Transfer Admittance yfs VDS=10V, ID=1A 1.68 2.8 S RDS(on)1 ID=1A, VGS=4V 160 210 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.5A, VGS=2.5V 200 280 m Ω RDS(on)3 ID=0.1A, VGS=1.8V 280 390 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 100 pF Output Capacitance Coss VDS=10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit 6.5 ns Rise Time tr See specified Test Circuit 28 ns Turn-OFF Delay Time td(off) See specified Test Circuit 19 ns Fall Time tf See specified Test Circuit 13 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.5A 4.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.5A 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.5A 0.4 nC Diode Forward Voltage VSD IS=1.5A, VGS=0 0.9 1.2 V [SBD] Reverse Voltage VR IR=0.5mA 15 V Forward Voltage VF1IF=0.3A 0.30 0.33 V VF2IF=0.5A 0.33 0.36 V Reverse Current IR VR=6V 90 µA Interterminal Capacitance C VR=10V, f=1MHz, 1 cycle 20 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 2195 54 3 12 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 2.0 0.65 0.3 0.15 1 32 4 5 12 3 54 (Bottom view) (Top view) |
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