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MCH5810 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # MCH5810
Description  MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

MCH5810 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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MCH5810
No.8194-2/6
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
µA
Gate-to-Source Leakage Current
IGSS
VGS=--8V, VDS=0
--1
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100µA
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--0.2A
0.2
0.42
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--0.2A, VGS=--4.5V
1.4
1.8
RDS(on)2
ID=--0.1A, VGS=--2.5V
2.0
2.8
Input Capacitance
Ciss
VDS=--10V, f=1MHz
40
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
8
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
4.5
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
5
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
10
ns
Fall Time
tf
See specified Test Circuit.
5
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4.5V, ID=--0.4A
0.83
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4.5V, ID=--0.4A
0.25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4.5V, ID=--0.4A
0.17
nC
Diode Forward Voltage
VSD
IS=--0.4A, VGS=0
--1.0
--1.5
V
[SBD]
Reverse Voltage
VR
IR=0.5mA
15
V
Forward Voltage
VF1IF=100mA
0.32
0.36
V
VF2IF=150mA
0.35
0.41
V
Reverse Current
IR
VR=6V
45
µA
Interterminal Capacitance
C
VR=10V, f=1MHz
10
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
Electrical Connection
unit : mm
2195
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
SANYO : MCPH5
2.0
0.65
0.3
0.15
1
32
4
5
12
3
54
(Bottom view)
(Top view)
12
3
54
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
Top view


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