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MCH5810 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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MCH5810 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page MCH5810 No.8194-2/6 Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=--8V, VDS=0 --1 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--0.2A 0.2 0.42 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--0.2A, VGS=--4.5V 1.4 1.8 Ω RDS(on)2 ID=--0.1A, VGS=--2.5V 2.0 2.8 Ω Input Capacitance Ciss VDS=--10V, f=1MHz 40 pF Output Capacitance Coss VDS=--10V, f=1MHz 8 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 4.5 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr See specified Test Circuit. 5 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 10 ns Fall Time tf See specified Test Circuit. 5 ns Total Gate Charge Qg VDS=--10V, VGS=--4.5V, ID=--0.4A 0.83 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4.5V, ID=--0.4A 0.25 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--0.4A 0.17 nC Diode Forward Voltage VSD IS=--0.4A, VGS=0 --1.0 --1.5 V [SBD] Reverse Voltage VR IR=0.5mA 15 V Forward Voltage VF1IF=100mA 0.32 0.36 V VF2IF=150mA 0.35 0.41 V Reverse Current IR VR=6V 45 µA Interterminal Capacitance C VR=10V, f=1MHz 10 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Package Dimensions Electrical Connection unit : mm 2195 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5 2.0 0.65 0.3 0.15 1 32 4 5 12 3 54 (Bottom view) (Top view) 12 3 54 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain Top view |
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